APTGT300SK170D3G APTGT300SK170D3G ? rev 1 september, 2008 www.microsemi.com 1-5 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1700 v t c = 25c 400 i c continuous collector current t c = 80c 300 i cm pulsed collector current t c = 25c 600 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 1470 w rbsoa reverse bias safe operating area t j = 125c 600a@1650v these devices are sens itive to electrostatic discharge. prope r handling procedures should be followe d. see application note apt0502 on www.microsemi.com 2 1 5 q1 3 4 v ces = 1700v i c = 300a @ tc = 80c application ? ac and dc motor control ? switched mode power supplies features ? trench + field stop igbt technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? high level of integration ? m6 power connectors benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive t c of v cesat ? rohs compliant buck chopper trench + field stop igbt power module
APTGT300SK170D3G APTGT300SK170D3G ? rev 1 september, 2008 www.microsemi.com 2-5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1700v 3 ma t j = 25c 2.0 2.5 v ce(on) collector emitter on voltage v ge = 15v i c = 300a t j = 125c 2.4 v v ge(th) gate threshold voltage v ge = v ce , i c = 12 ma 5.2 5.8 6.4 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 27 c res reverse transfer capacitance v ge = 0v, v ce = 25v f = 1mhz 0.9 nf q g gate charge v ge =15v, i c =300a v ce =900v 3.5 c t d(on) turn-on delay time 280 t r rise time 80 t d(off) turn-off delay time 850 t f fall time inductive switching (25c) v ge = 15v v bus = 900v i c = 300a r g = 4.7 120 ns t d(on) turn-on delay time 300 t r rise time 100 t d(off) turn-off delay time 1000 t f fall time inductive switching (125c) v ge = 15v v bus = 900v i c = 300a r g = 4.7 200 ns t j = 25c 71 e on turn on energy t j = 125c 105 t j = 25c 64 e off turn off energy v ge = 15v v bus = 900v i c = 300a r g = 4.7 t j = 125c 94 mj i sc short circuit data v ge 15v ; v bus = 1000v t p 10s ; t j = 125c 1200 a reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1700 v t j = 25c 750 i rrm maximum reverse leakage current v r =1700v t j = 125c 1000 a i f dc forward current tc = 80c 300 a t j = 25c 1.8 2.2 v f diode forward voltage i f = 300a t j = 125c 1.9 v t j = 25c 385 t rr reverse recovery time t j = 125c 490 ns t j = 25c 76 q rr reverse recovery charge t j = 125c 124 c t j = 25c 35 e rr reverse recovery energy i f = 300a v r = 900v di/dt =3500a/s t j = 125c 70 mj
APTGT300SK170D3G APTGT300SK170D3G ? rev 1 september, 2008 www.microsemi.com 3-5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.085 r thjc junction to case thermal resistance diode 0.13 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 3500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 125 c for terminals m6 3 5 torque mounting torque to heatsink m6 3 5 n.m wt package weight 350 g d3 package outline (dimensions in mm) 1 a dtail a
APTGT300SK170D3G APTGT300SK170D3G ? rev 1 september, 2008 www.microsemi.com 4-5 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 150 300 450 600 00.511.522.533.54 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =20v v ge =9v 0 100 200 300 400 500 600 012345 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c t j =125c 0 100 200 300 400 500 600 567891011 v ge (v) i c (a) energy losses vs collector current eon eoff err 0 75 150 225 300 0 100 200 300 400 500 600 i c (a) e (mj) v ce = 900v v ge = 15v r g = 4.7 ? t j = 125c eon eoff err 0 100 200 300 400 0 5 10 15 20 25 30 35 gate resistance (ohms) e (mj) v ce = 900v v ge =15v i c = 300a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 100 200 300 400 500 600 700 0 400 800 1200 1600 2000 v ce (v) i c (a) v ge =15v t j =125c r g =4.7 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
APTGT300SK170D3G APTGT300SK170D3G ? rev 1 september, 2008 www.microsemi.com 5-5 forward characteristic of diode t j =25c t j =125c t j =125c 0 100 200 300 400 500 600 0 0.5 1 1.5 2 2.5 3 v f (v) i f (a) hard switching zcs zvs 0 5 10 15 20 0 100 200 300 400 i c (a) fmax, operating frequency (khz) v ce =900v d=50% r g =4.7 ? t j =125c t c =75c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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